Recent Advances in LDMOS Technology
This tutorial begins by providing a review of recent advances in RF-LDMOS device technology (i.e. high power plastic packaging, higher efficiency, higher frequency capability, high power RFICs, 50V RF-LDMOS, etc.). Next, the tutorial will provide a comparison of various figures of merit of 28V and 50V RF-LDMOS with GaN, an emerging RF power technology that is attractive from several perspectives as an RF power device technology.
What you will learn:
- Review recent advances in RF-LDMOS device technology
- Compare various figures of merit of 28V and 50V RF-LDMOS with GaN
Related courses:
Who should attend: Electrical engineer, Design engineer, Product engineer, Lead engineer, Project engineer, Manufacturing engineer
Instructor
Wayne Burger
Wayne Burger graduated from MIT with a Ph.D. in Electrical Engineering with his thesis work focusing on the deposition and characterization of low temperature silicon epitaxial films. After working on BiCMOS SRAM's at National Semiconductor for two years, he joined Motorola's Semiconductor Product Sector (which later became Freescale Semiconductor). Early projects at Motorola include 0.60um CMOS and 0.35um BiCMOS development. Dr. Burger has been manager of the RF-LDMOS Device Development team at Freescale Semiconductor since 1994
Publication Year: 2009
ISBN: 978-1-4244-6135-6